B1 1 june 2009 2n5551 mmbt5551 npn general purpose amplifier features this device is designed for general purpose high voltage amplifiers and gas. In my book, the early effect is modelled as a resistor, r o, between the collector and emitter. Changing the value of r l will affect the amplification of the output wave. Free packages are available maximum ratings rating symbol value unit collector. Btmapril 20062n5551 mmbt5551npn general purpose amplifierfeatures this device is designed for general purpose high voltage amplifiers and gas discharge display drivers.
This device is designed for general purpose high voltage amplifiers and gas discharge display drivers vceo vcbo vebo ic tj, tstg collectorbase. Bsc high voltage npn transistor for general purpose and. You will receive an email when your request is approved. Onsemi mplifier transistorsnpn silicon,alldatasheet, datasheet, datasheet search site for electronic. This agreement may be executed in counterparts, each of which shall be deemed to be an original, and which together shall constitute one and the teansistor agreement. Feb 05, 2012 in my book, the early effect is modelled as a resistor, r o, between the collector and emitter. The 2n5551 is an npn amplifier transistor with an amplification factor hfe of 80 when the collector current is 10ma. Toshiba transistor silicon npn epitaxial type pct process 2sc1815 audio frequency general purpose amplifier applications driver stage amplifier applications high voltage and high. Kst904 1 2n5551 npn silicon transistor descriptions general purpose amplifier high voltage application features high collector breakdown voltage. The product status of devices described in this document may have changed since this document was published and may differ in case of multiple devices. Toshiba transistor silicon npn epitaxial type pct process. Semtech npn silicon expitaxial planar transistor for general purpose, high voltage amplifier applications. This device is designed for general purpose high voltage amplifiers and gas discharge display drivers vceo vcbo vebo ic tj, tstg collectorbase voltage emitterbase voltage collector current continuous collectoremitter voltage. Discrete semiconductors data sheet book, halfpage m3d186 2n5550.
Click here specifications bipolar transistor transistor polarity. Npn highvoltage transistor pmbt5551 data sheet status notes 1. Aug 29, 2016 2n5551 datasheet npn amplifier fairchild, mmbt5551 datasheet, 2n5551 pdf, 2n5551 pinout, 2n5551 equivalent, data, circuit, output, ic, 2n5551 schematic. Finding the early voltage from the 2n5551 datasheet physics. Complementary pair with 2n5401 ordering information type no. B1 1 june 2009 2n5551 mmbt5551 npn general purpose amplifier features this device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Guide to 2n series transistors approximate specs and characteristics. Unfollow transistor 2n5551 to stop getting updates on your ebay feed. Dec 21, 2017 the 2n5551 is an npn amplifier transistor with an amplification factor of 80 when the collector current is 10ma. Npn silicon expitaxial planar transistor for general purpose, high voltage amplifier applications, 2n5551 datasheet, 2n5551 circuit, 2n5551 data sheet. Please consult the most recently issued document before initiating or completing a design. Jul 09, 2019 you will receive an email when your request is approved. Vcbo 180v, vceo 160v low collector saturation voltage. Preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a.
See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Toshiba transistor silicon npn epitaxial type pct process 2sc1815 audio frequency general purpose amplifier applications driver stage amplifier applications high voltage and high current. Semiconductor transistor, diode, ic cross reference. Vceo 50 v min, ic 150 ma max excellent hfe linearity. Mps3646 226aa junction218a msc1621t1 msc2404 msd1819a mv1620 mv1624 mv1636 mv1640 bc237 mps4123 opposite transistor bc107 specifications mps3646 mps3646 equivalent transistor equivalent 2n5551 transistor equivalent book 2n5401 2n3819 equivalent transistor transistor 2n5551 equivalent. Npn silicon transistor general purpose amplifier high voltage application, 2n5551 datasheet, 2n5551 circuit, 2n5551 data sheet.
The characteristics and approximate specifications of 2n series discrete. Datasheet 2n5551 fairchild transistor npn to92 for sale. The circuit schematic symbol of a diode is shown in figure 5. The 2n32 is an rca pointcontact transistor in a singleended package that has all leads emerging from the same end. Here is an image showing the pin diagram of the this transistor. Auk, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Onsemi mplifier transistorsnpn silicon,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Continental device india limitedan isiso 9002 and iecq certified manufacturernpn epitaxial planar silicon high voltage transistor2n5551to 92cbehigh voltage npn transistor for general purpose and telephony applications. Small signal npn bipolar transistor this agreement, including the exhibits attached hereto, constitutes the entire agreement and understanding between the. Absolute maximum ratingsta25deg c unless otherwise specifieddescriptionsymbol datasheet search, datasheets, datasheet search site for electronic components and.
Emitter voltage 2n5550 2n5551 vceo 140 160 vdc collector. Base voltage 2n5550 2n5551 vcbo 160 180 vdc emitter. Finding the early voltage from the 2n5551 datasheet. Hence comparing the schematic symbol to the pn junction in figure 4, we see the anode is the ptype semiconductor and the. Absolute maximum ratings ta 25c unless otherwise noted. The leads were anchored in a small glass block, allowing the transistor to be constructed above it, and then the whole upper part was sealed in a white epoxy block. Elektronische bauelemente 2n5551 600ma, 160v npn plastic encapsulated transistor rohs compliant pr. This agreement may be executed in counterparts, each of. Home components smdsmt components transistors mmbt5551 sot23 2n5551 smd npn high voltage transistor g1 marking. H absolute maximum ratings ta25 c, unless otherwise specified parameter symbol ratings unit collectorbase voltage vcbo 180 v collectoremitter voltage vceo 160 v emitterbase voltage vebo 6 v to92 625 mw collector dissipation sot89 pc 500 mw. Absolute maximum ratings ta 25c unless otherwise noted these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Semtech npn silicon expitaxial planar transistor for general purpose, high voltage amplifier applications,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors.
The product status of the devices described in this data sheet may have changed since this data sheet was published. Jul 08, 2019 2n5551 transistor pdf 2n from on semiconductor specification. Ic cross reference cross reference ci stk cross reference ci tda cross reference ci sharp cross reference hitachi audio ic cross. Semtech, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Free devices maximum ratings rating symbol value unit collector. Mv1624 mv1636 mv1640 bc237 mps4123 opposite transistor bc107. Vceo160v high current gain applications telephone switching circuit amplifier ordering information ordering number pin assignment package packing lead free plating halogen free 1 2 3 2n5551lx. Onsemi, alldatasheet, datasheet, datasheet search site for electronic. Mmbt5551 sot23 2n5551 smd npn high voltage transistor. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the. So if you are looking for an npn transistor for you amplifier circuit then this transistor might be the right choice.
When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads. Continental device india limitedan isiso 9002 and iecq certified manufacturernpn epitaxial planar silicon high voltage transistor2n5551to 92cbehigh voltage npn. May 14, 2019 2n5551 transistor pdf 2n from on semiconductor specification. Btmapril 20062n5551 mmbt5551npn general purpose amplifierfeatures this device is. The resistor r1 is the load resistor and the resistor r2 is the emitter resistor. Please consult the most recently issued data sheet before initiating or completing a design.